Product Summary
The ZXMN10A07FT is an N-channel enhancement mode MOSFET from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes the ZXMN10A07FT ideal for high efficiency, low voltage, power management applications. The applications of the include DC - DC Converters, Power Management Functions, Relay and Solenoid driving, Motor control.
Parametrics
ZXMN10A07FT absolute maximum ratings: (1)Maximum Drain Voltage, VD,MAX: 650 V; (2)Drain-Gate Voltage (RGS=1MΩ), VDGR: 650 V; (3)Gate-Source (GND) Voltage, VGS: ±30 V; (4)Drain Current Pulsed, IDM: 12.0 ADC; (5)Continuous Drain Current (TC=25℃), ID: 3.0 ADC; (6)Continuous Drain Current (TC=100℃), ID: 2.4 ADC; (7)Single Pulsed Avalanche Energy, EAS: 358 mJ; (8)Maximum Supply Voltage, VCC,MAX: 30 V; (9)Analog Input Voltage Range, VFB: -0.3 to VSD V; (10)Total Power Dissipation, PD: 75 W; Derating: 0.6 W/℃; (11)Operating Junction Temperature, TJ: +160℃; (12)Operating Ambient Temperature, TA: -25 to +85℃; (13)Storage Temperature Range, TSTG: -55 to +150℃.
Features
ZXMN10A07FT features: (1)Low on-resistance; (2)Fast switching speed; (3)Low threshold; (4)Low gate drive; (5)SOT23 package.
Diagrams
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![]() ZXMN10A07FTA |
![]() Diodes Inc. |
![]() MOSFET 100V N-Chnl UMOS |
![]() Data Sheet |
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![]() ZXMN10A07FTC |
![]() Diodes Inc. / Zetex |
![]() MOSFET 100V N-Chnl UMOS |
![]() Data Sheet |
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